SPIE2006

Hyunjo Yang*, Jaeseung Choi*, Byungug Cho*, Jongkyun Hong*,Jookyoung Song*, Donggyu Yim*, Jinwoong Kim*, Masahiro Yamamoto**

* Memory Research & Development Division, Hynix Semiconductor Inc., Korea

** NGR Inc., Japan

Conclusions

  • We have demonstrated a new OPC verification method using Die-to-Database inspection tool
  • Systematic defects are lithography or design related defects and the impact of systematic defects on yield is dramatically increasing.

  • A novel measurement system which can verify all kinds of patterns based on Die to Database comparison method has been developed. It can identify all the serious systematic defects of nm order size error from the original layout target.
  • The systematic defects are analyzed and fed back to the source processes where the defects are made at and to simulation and OPC tool for better model tuning and even to design for DFM.
  • We were able to find some hot spots and process window mismatch among several CD groups with the measurement results and feed back to OPC. ②Defect Inspection for Imprint Lithography Using a Die to Database Electron Beam Verification System ② Defect Inspection for Imprint Lithography Using a Die to Database Electron Beam Verification System